Abstract
Thin films of amorphous Mo <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><sub>x</sub></i> Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-</sub> <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><sub>x</sub></i> grown with magnetron sputtering are known to exhibit excellent homogeneity and fairly high superconducting transition temperatures (up to 7.5 K). These properties make MoGe thin films suitable to form high-quality tunnel junctions, as demonstrated recently by our group [see Supercond. Sci. Technol. 35, 035008 (2022)]. Here, we report the experimental demonstration of an MoGe/Al/AlO <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><sub>x</sub></i> /(Al)MoGe Josephson oscillator based on amorphous superconductor MoGe, which allows for continuous tuning of the oscillation frequency from about 1 GHz up to tens of GHz. We believe such an oscillator may be useful as a compact on-chip microwave source suitable to control some types of qubits based on Josephson junctions.
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