Abstract
Some basic steps in the development of a low-noise monolithic preamplifier system for multielectrode detectors are reviewed. Some of these steps refer to the realization of an effective filter on the monolithic chip. Others were oriented toward arriving at a technology suitable for a low-noise design. A nonhomogeneous monolithic process combining N- and P-channel JFET and N- and P-channel MOS on the same substrate meets the objective. Radiation hardening considerations restricted the design to two device categories only, NJFET and PMOS. As a preliminary result of the effort in the areas of filter design and technology development, a 64-channel preamplifier system for microstrip detectors is described. >
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
