Janus single layers of In2SSe : A first-principles study

Abstract

By performing first-principles calculations, we propose a stable direct band gap semiconductor Janus single-layer structure, ${\mathrm{In}}_{2}\mathrm{SSe}$. The binary analogs of the Janus structure, InS and InSe single layers are reviewed to evince the structural and electronic relation with ${\mathrm{In}}_{2}\mathrm{SSe}$. The structural optimization calculations reveal that a Janus ${\mathrm{In}}_{2}\mathrm{SSe}$ single layer has hexagonal geometry like the InS and InSe single layers, which are also its structural analogs. The Janus single layer is dynamically stable, as indicated by the phonon spectrum. The electronic band diagram of the Janus structure shows that an ${\mathrm{In}}_{2}\mathrm{SSe}$ single layer is a direct band gap semiconductor, in contrast to its analogs, InS and InSe single layers, which are indirect band gap semiconductors. Nevertheless, it is found that the strain effect on electronic properties of the InS and InSe single layers designates the electronic structure of the Janus single layer. A rough model for the construction of the electronic band diagram of the Janus structures is discussed, and it is indicated that the difference in work functions of chalcogenide sides in the Janus structure determines the construction of the electronic structure. It is found that the Janus structure is a robust direct gap semiconductor under tolerable strain; for that reason, the Janus ${\mathrm{In}}_{2}\mathrm{SSe}$ single layer is a candidate for optoelectronic nanodevice applications.