Abstract
Near-field radiation that has a high intensity of electric field was applied to enhance conversion from thermal energy to electricity. A thermophotovoltaic cell made of GaSb semiconductors was used to confirm that the near-field radiation effect (the evanescent wave effect) can be applied to enhance generation of electricity. In this study, a new setup and TPV cell was developed using SiO_2 spacer on the cell to clarify evanescent field distribution. An increase in output power generation of electricity by the evanescent wave effect was thought using the new setup because the resonance region was calculated between tungsten and GaSb.
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