J122032 LSI製造における電気めっき制御槽のしゃへい板配置の最適化([J12203]解析・設計の高度化・最適化(3))

Abstract

Copper electroplating is generally used to form micro wiring in LSI fabrication. In recent years, to form more complicate and finer wiring, it is necessary to ensure uniformity of plating film on LSI wafer for electroplating process. The thickness of the plating film is proportional to current density on the plated surface. Therefore controlling the current density on the plated surface is necessary to ensure fine electroplating on LSI fabrication. In this study, an electroplating cell has developed to control the current density by movable shields. The movable shields are attached horizontally to the plated surface and control the current flow by changing their locations. The shield locations have been optimized by using Boundary Element Method (BEM) and quasi-Newton's method to uniform the current density distribution. To verify the effectiveness of the developed cell, the experimental results by the cell and the simulation results by BEM were compared.