J–V characteristics of dark current in truncated conical quantum dot infrared photodetectors (QDIPs)

Abstract

Quantum Dot Infrared Photodetector (QDIP) is one of the promising candidates for infrared photodetection due to its controllable heterojunction bandgap and sensitivity to normal incident radiation. It is expected to be superior to infrared photodetectors of mature technologies such as Mercury Cadmium Telluride (HgCdTe) or a quantum well infrared photodetector. In the presented paper, we have developed a theoretical model for the dark current in truncated conical QDIP as the truncated conical shaped QD structure is more appropriate to describe the fabricated dots. The dark current model is based on the drift diffusion model solving the main governing Poisson’s and continuity equations. In this model, the carrier mobility is calculated by solving time-dependent Boltzmann transport equation in the photodetector material with embedded truncated conical QDs using finite difference technique. The results of the developed model have been compared with the dark current characteristics with published experimental results of Indium Arsenide/Gallium Arsenide (InAs/GaAs) truncated QDIP. The effects of QD volume, QD aspect ratio and QD density and the operating temperature on the dark current characteristics have also been investigated.