Abstract
With the popularization of electronic equipment, indium zinc oxide (IZO) thin film transistor (TFT) research has become a hot spot. Due to the excellent characteristics of solution method, solution-processed IZO TFTs have seen wide applications in various fields. However, the study on the trapping state distribution of solution-processed IZO TFTs is not thorough enough, and the current research methods have limitations. Therefore, the ultraviolet (UV) analysis method is introduced for analyzing the trap state distributions. Then, the UV analysis method is optimized using the random matrix. The interface and bulk trap states are extracted, and the feature of trap states is analyzed. Experimental results show that under the proposed method, the bulk trap concentration of IZO TFTs is 1018∼1019 cm−3 eV−1, and the interface state density is 1012∼1013 cm−2V−1. They all change with wavelength. The proposed method is effective, feasible, and easy to implement. The research will make an important contribution to the preparation of high-performance IZO TFTs.
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