Abstract
The formation of a continuous series of substitutional solid solutions is theoretically considered from the viewpoint of taking into account generalized moments and differences in the valence and the covalent radii of atoms or molecules of initial components. These considerations are used to develop technology for the fabrication of (Si2)1−x(GaAs)x (0≤x≤0.96) and (Si2)1−x(GaP)x (0≤x≤1) epitaxial layers on silicon substrates from a tin melt-solution by the forced cooling method. The distribution of components over the thickness of the (Si2)1−x(GaAs)x and (Si2)1−x(GaP)x layers, the photosensitivity, and the current-voltage characteristics of Si-(Si2)1−x(GaAs)x and Si-(Si2)1−x(GaP)x heterostructures were studied. The analysis of results of X-ray investigations and photoelectric properties indicate that the grown epitaxial layers of (IV2)1−x(III-V)x solid solutions are structurally perfect.
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