Abstract
Both Ge- and Sn-doped CdTe single crystals were grown and their electrical, photoelectrical and magnetic properties were investigated. The crystal's specific resistivity rises suddenly upon reaching some critical dopant content value but then remains stable. Photoelectrical investigations indicate the presence of centers of fast and slow recombination with different capture cross-section values for electrons and holes. The magnetic properties show diamagnetism lowering as Ge contents rise. The results are discussed in the framework of the dopant self-compensation mechanism.
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