Abstract
Experimental I-V curves of microwave-driven Josephson tunnel junctions with resistive shunts are reported. The results are in very good agreement with numerical calculations using the resistively shunted junction model. In the low-frequency regime there are three distinct regions in the I-V curves and two different types of Shapiro steps. It is demonstrated that the overall shape of the I-V curves can be explained by using an adiabatic interpretation of the junction response. The two different types of Shapiro steps are related to a compensation effect between dc and rf bias currents.
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