IV and CV measurements of Schottky diodes deposited on Ge by electron beam and sputter deposition

Abstract

AbstractVarious Schottky metal contacts were deposited on bulk grown (111) Sb‐doped n‐type Germanium. The Schottky contacts were deposited by resistive evaporation, electron beam deposition and RF sputter deposition. Current–voltage (IV) and capacitance–voltage (CV) measurements revealed differences in the diode performance that suggested damage caused to the germanium semiconductor crystal by the more energetic deposition methods of electron beam deposition and sputter deposition. Subsequent annealing improved the diode performance thus succeeding in removing some of the defects introduced, but not all. Sputter deposition produced the poorest diodes highlighting this as the most damaging process. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)