Abstract
We present IV and CV curves for irradiated prototype n/sup +//n/p/sup +/ silicon pixel sensors, intended for use in the BTeV experiment at Fermilab. We tested pixel sensors from various vendors and with two pixel isolation techniques: p-stop and p-spray. Results are based on irradiation with 200-MeV protons up to 6/spl times/10/sup 14/ protons/cm/sup 2/.
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