Abstract

The mode stability of shallow surface relief vertical cavity surface emitting laser( VCSEL)is constrained by the nonuniform current density distribution in the active region. In order to solve this problem,a new type of structure was put forward,in which indium tin oxide( ITO) transparent conductive layer was employed in shallow surface relief VCSEL. This structure not only can increase the threshold gain of the higher-order modes but also can improve the gain of fundamental model and strengthen the suppressive effect of fundamental mode on higher order mode. The influence of the ITO thickness on the threshold gain and the effect of ITO on the current density distribution in active region are studied. It is found that the suppressive effect of fundamental mode on higher order mode is strongest when the thickness of ITO is integral multiples of the half wavelength. The gain of fundamental mode increases and the gain of higher order decreases with the improving of the current density distribution in the active region of VCSEL,and at the same time,the series resistance and the voltage are also reduced.

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