ITO–TiN–ITO Sandwiches for Near-Infrared Plasmonic Materials

Abstract

Indium tin oxide (ITO)-based sandwich structures with the insertion of ultrathin (<10 nm) titanium nitride (TiN) are investigated as near-infrared (NIR) plasmonic materials. The structural, electrical, and optical properties reveal the improvement of the sandwich structures stemmed from TiN insertion. TiN is a well-established alternative to noble metals such as gold, elevating the electron conductivity of sandwich structures as its thickness increases. Dielectric permittivities of TiN and top ITO layers show TiN-thickness-dependent properties, which lead to moderate and tunable effective permittivities for the sandwiches. The surface plasmon polaritons (SPP) of the ITO-TiN-ITO sandwich at the telecommunication window (1480-1570 nm) are activated by prism coupling using Kretschmann configuration. Compared with pure ITO films or sandwiches with metal insertion, the reflectivity dip for sandwiches with TiN is relatively deeper and wider, indicating the enhanced coupling ability in plasmonic materials for telecommunications. The SPP spatial profile, penetration depth, and degree of confinement, as well as the quality factors, demonstrate the applicability of such sandwiches for NIR plasmonic materials in various devices.