ITON Schottky contacts for GaN based UV photodetectors

Abstract

Lateral Schottky ultraviolet detectors were fabricated in GaN using indium-tin-oxynitride (ITON) as a contact metal. The GaN semiconductor material was grown on 2 in. sapphire substrate by metal–organic chemical vapor deposition (MOCVD). The Schottky contact has been realized using ITON that has been deposited using sputter techniques. I– V characteristics have been measured with and without UV illumination. The device shows photo-to-dark current ratios of 10 3 at −1 V bias. The spectral responsivity of the UV detectors has been determined. The high spectral responsivity of more than 30 A/W at 240 nm is explained by a high internal gain caused by generation–recombination centers at the ITON/GaN interface. Persistent photocurrent effect has been observed in UV light (on–off) switching operation, time constant and electron capture coefficient of the transition has been determined.