Abstract
We have fabricated the µ-hole array on silicon surface using short-pulse laser, and prepared ITO-nanowire networks via polystyrene spheres. They formed a super-broadband antireflection layer that has gradual refractive index and excellent antireflective properties. The reflectance reached about 15% in the band of 400–2500 nm, and the surface could maintain a strong electrical conductivity. The finite difference time domain method was used to analysis the effect of µ-hole array on the light field, and the antireflection effect of ITO nanowires was calculated. To make use of the light energy in infrared band more effectively, it is a key role to keep a certain hole-spacing. This method will provide a novel and practical model for surface texturing to improve the efficiency of solar cells by using the infrared band light.
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