ITO/MgSe interfaces designed as gigahertz/terahertz filters

Abstract

Herein a new class of MgSe gigahertz/terahertz band filters operatives in the frequency domain of 1.0 GHz-1.86 THz is fabricated and experimentally tested. MgSe band filters are coated onto glass and indium tin oxide (ITO) substrates by the thermal evaporation technique under a vacuum pressure of 10−5 mbar. Thin films of MgSe are structurally, morphologically, compositionally, optically and electrically characterized. It is observed that ITO substrates induce the growth of monophasic of MgSe, enhances the crystallinity of the films and blueshifts the energy band gaps of MgSe. Practical applications were verified by impedance spectroscopy technique through imposing an ac signal of driving frequency in the domain of 10.0 MHz-1.8 GHz between the terminals of ITO/MgSe/Au (IMA) devices. It is observed that the IMA devices exhibit negative capacitance effect. Analysis of the cutoff frequency spectra has shown that IMA devices can reveal wide range of tunability in the gigahertz frequency domain. In addition, the cutoff frequency spectra show values reaching ∼1.86 THz for signals of driving frequencies of ∼1.0 GHz. Evaluation of the magnitude of the reflection coefficient spectra and return loss spectra for these devices show that the IMA devices can perform as bandstop filters with return loss values exceeding 20 dB at 1.0 GHz. The features of the ITO/MgSe/Au devices are appropriate for the 5 G/6 G technology needs indicating that the device can be employed in communication technology and other gigahertz/terahertz applications.