Abstract

Since Complementary metal–oxide–semiconductor technology is the conventional technology for micro- and optoelectronics, integration of emerging materials, such as halide perovskites, into the process is an important branch of perovskite technologies development. In this regard ITO free device research becomes increasingly important. The Perovskite Light-Emitting electrochemical cells are a promising alternative to conventional Perovskite Light Emitting Diodes. In this work we demonstrate green (λEL = 523 nm) CsPbBr3 Perovskite Light-Emitting electrochemical cells with luminescence intensity of 50 kd/m2 integrated with Si++(111) substrate.

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