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Abstract
Indium tin oxide (ITO) films were deposited by radio frequency (rf)-plasma enhanced reactive thermal evaporation (rf-PERTE) at room temperature on intrinsic ZnO/polymer substrates to enhance their electrical and structural properties. The polymer substrate used is polyethylene terephthalate (PET). The thickness of the ZnO films varied in the range 50–150 nm. The average thickness of the ITO films is of about 170 nm. Results show that ITO deposited on bare PET substrates exhibit: an average visible transmittance of about 85% and an electrical resistivity of 5.6 × 10 −2 Ω cm. ITO on ZnO/PET substrates show the optical quality practically preserved and the resistivity decreased to a minimum value of 1.9×10 −3 Ω cm for ZnO layers 125 nm thick. The electrical properties of ITO on ZnO/PET are largely improved by the increase in carrier mobility.
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