Abstract

ITO coating of n-semiconductors should protect them against photocorrosion in aqueous electrolytes. For this purpose n-GaAs/ITO electrodes were produced by the magnetron sputtering technique. The dependence of the photovoltaic properties on the post deposition annealing temperatures is shown. The best photovoltaiv parameters are produced by 320°C annealing. Unfortunately, the ITO/ n-GaAs electrodes also undergo corrosion in aqueous electrolytes. A model for this unexpected photoelectrochemical behaviour is developed.

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