Abstract
We report on the application of a laser rapid thermal annealing technique for iterative bandgap engineering at selected areas of quantum semiconductor wafers. The approach takes advantage of the quantum well intermixing (QWI) effect for achieving targeted values of the bandgap in a series of small annealing steps. Each QWI step is monitored by collecting a photoluminescence map and, consequently, choosing the annealing strategy of the next step. An array of eight sites, 280 mum in diameter, each emitting at 1480 nm, has been fabricated with a spectral accuracy of better than 2 nm in a standard InGaAs/InGaAsP QW heterostructure that originally emitted at 1550 nm.
Highlights
Bandgap engineering techniques addressing fabrication of the III-V quantum semiconductor (QS) wafers with spatially selected regions of different bandgap energy material have been of great interest for fabrication of monolithically integrated photonic devices (MIPDs) [1,2]
We have developed a highly-reproducible process of iterative bandgap engineering at selected areas (IBESA) that allows fabrication of QS wafers with regions of quantum well intermixing (QWI) material emitting at arbitrarily set blue-shifted wavelengths
To illustrate the IBESA approach, we requested that all the sites from both rows A and B would emit at 1480 nm, i.e., at the same emission wavelength as A3 and B1
Summary
Bandgap engineering techniques addressing fabrication of the III-V quantum semiconductor (QS) wafers with spatially selected regions of different bandgap energy material have been of great interest for fabrication of monolithically integrated photonic devices (MIPDs) [1,2]. Received 3 Aug 2009; revised 28 Sep 2009; accepted 6 Oct 2009; published 16 Oct 2009 26 October 2009 / Vol 17, No 22 / OPTICS EXPRESS 19843 has prevented the introduction of bandgap engineering processes relying on accurate calibration procedures, analogous to those known in the manufacture of Si-based circuits comprising, e.g., a monolithically integrated inductance [25]. To address this issue, we have developed a highly-reproducible process of iterative bandgap engineering at selected areas (IBESA) that allows fabrication of QS wafers with regions of QWI material emitting at arbitrarily set blue-shifted wavelengths
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