Abstract
Review of results on microcrystalline silicon thin film transistors is given with emphasis on main issues to get both higher stability and mobility TFTs than that of amorphous silicon transistors. High crystalline fraction with columnar structure is shown to lead to high mobility without stability when using silicon dioxide as gate insulator, or stable TFTs with low mobility when using silicon nitride as gate insulator. Un-stability originates from oxygen that diffuses in defected column boundaries. Using denser structure as crystalline grains embedded in amorphous matrix can lead to TFTs with enough stability and mobility.
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