Abstract
We report on fabrication and characterization of SnO 2– Si n–n made by deposition of SnO 2 film onto monocrystalline silicon substrate by rapid photothermal oxidation (RPO) of Sn with condition 500°C/120 s. The film has been characterized by techniques such as XRD, optical transmission, and Hall effect. The XRD spectrum showed that the grown SnO 2 was polycrystalline in nature with tetragonal crystal structure. From optical transmittance data the band gap of SnO 2 film was calculated and found to be 3.9 eV. The electrical measurement revealed that the SnO 2 film was n-type. Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of SnO 2– Si heterojunction were investigated. The ideality factor of junction estimated from I–V characteristics was 1.8 at 300 K. The spectral responsivity of heterojunction having two peaks of response located at 650 nm and 850 nm.
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