Abstract
The new era of nanoelectronics on the graphene basis needs the creation of the semiconducting graphene. Numerous attempts to elaborate the semiconducting graphene creation technology meet several difficulties: firstly it is quite expensive; secondly it is technically difficult to produce. In the present paper the based on principle new nuclear semiconducting graphene creation technology is described. The new method is based on the electronic excitations energy renormalization by the strong (nuclear) interaction. Suggested method provides an alternative way to experimentally tune the band - gap of graphene, which would be more efficient and more controllable than other methods that are used to open band - gap in graphene. This method not only opens the isotopical band - gap in graphene but also may throw light on the massless fermion renormalization in graphene.
Highlights
Numerous attempts to elaborate the semiconducting graphene creation technology meet several difficulties: firstly it is quite expensive; secondly it is technically difficult to produce
Carbon atom is built from 6 protons, A neutrons and 6 electrons, where A = 6 or 7, yield the stable isotopes 12C and 13C, respectively, and A =8 characterizes the radioactive isotope 14C
One of the most basic elements in nature, still gives a lot surprises. It is found in many different forms - allotropes - from zero dimensional fullerene, one dimensional carbon nanotubes, two dimensional graphene and graphite, to three dimensional diamond (Fig. 1) - and the properties of the various carbon allotropes can vary widely [3]
Summary
Numerous attempts to elaborate the semiconducting graphene creation technology meet several difficulties: firstly it is quite expensive; secondly it is technically difficult to produce. Keywords Isotope Effect, Graphene, Electron - Phonon Interaction, Electrodynamics, Chromodynamics, Mass Renormalization of Massless Fermion The bonding π and antibonding π* orbitals produce valence and conduction bands (Fig. 2) which cross at the charge neutrality point (Fermi level of undoped graphene) at vertices of the hexagonal Brillouin zone.
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