Abstract
An experiment that directly observes the H 2 elimination reaction from the surface of a-Si:H during growth by reactive magnetron sputtering is described. Mass spectrometry is used to detect desorbing HD molecules from an a-Si:D film exposed to a silicon-hydrogen growth flux. We infer that the surface kinetics is rate limited by the arrival of film precursors and not surface reorganization reactions for typical deposition conditions, and that the arriving growth flux is relatively hydrogen poor compared to grow discharge deposition.
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