Abstract
Atomic deuterium (D) interaction with the polar 3C–SiC(100) 3×2 surface is investigated by synchrotron radiation-based valence band and core level photoemission. D is found to induce metallization of the surface. The D atoms lead to a charge transfer into the topmost Si and C planes, with D atoms terminating top surface dangling bond and an asymmetric attack in the third Si plane. However, a significant isotopic effect is observed when compared to the H-induced metallization with amazingly smaller charge transfer suggesting dynamical effects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
