Abstract
A procedure for the isotopic analysis of 28Si-enriched silicon by laser mass spectrometry is described. The procedure is based on the analysis of a dry concentrate or a film obtained by the pneumatic nebulization of an analyte and an internal standard solution or by the laser sputtering of a solid phase onto a support of a high-purity substance. The range of determinable isotope concentrations is (100–n× 10–6) at %; the total error in determining the major isotope is n× 10–2at % at an enrichment factor higher than 99%. The procedure provides the simultaneous control of 70 impurity elements in the sample.
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