Abstract
Far IR study of high-purity crystalline silicon implanted by protons and deuterons at low ion beam current density and room temperature was performed. Isotope analysis shows that a set of new absorption bands at 200–1500 cm−1 are connected to hydrogen-related centers including bistable centers. It is found that the behavior of the bands correlates with that of high-order bands observed in the near infrared absorption spectra of neutron-irradiated silicon. The bands are tentatively associated with nanostructured hydrogen-related defects.
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