Abstract
The carbon vacancy (VC) is a minority carrier lifetime controlling defect in 4H-SiC and it is formed during high temperature treatment. In this study, we have performed heat treatment on two sets of n-type 4H-SiC epitaxial samples. The first set was isothermally treated at 1850 °C to follow the evolution of VC as a function of time. The VC concentration is not affected by changing the duration. Samples of the other set were treated at 1950 °C for 10 min, but with different cooling rates and a reduction of the VC concentration was indeed demonstrated by lowering the cooling rate. The VC concentration in the slow-cooled sample is about 2 times less than in the fast-cooled one, reflecting a competition between equilibrium conditions and the cooling rate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
