Abstract
Phase equilibria in the Ti–Si–Ga system were investigated by physico-chemical analysis methods (metallography, XRD and EPMA) in a limited composition range of below 31 at.% Ga and above 62 at.% Ti at 1350°C for the first time. The Ti 5(Si,Ga) 3 phase on the Ti 5Si 3 compound base exists up to about 25 at% Ga. It coexists with the phases of the Ti–Ga system (β, Ti 2Ga and Ti 5Ga 3) and forms an extended two-phase region β+Ti 5(Si,Ga) 3, a narrow region Ti 2Ga+Ti 5(Si,Ga) 3, and two three-phase fields, Ti 2Ga+Ti 5(Si,Ga) 3+Ti 5Ga 3 and β+Ti 5(Si,Ga) 3+Ti 2Ga. The solubility of silicon in Ti 2Ga and in Ti-based phases is small.
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