Abstract

Requirements to the measuring setup are formulated, which make it possible obtaining isothermal current-voltage (I-V) characteristics of the Gunn diode with reflection of their discontinuities, region of negative differential resistance, and hysteresis. The influence of the inductance of the test pulses, source on the occurrence of self-excitation in the connecting transmission line is investigated. The maximum permissible values of the inductance of the test signal source are indicated. Operation of the measuring circuit without self-excitation was experimentally achieved in most of the region with negative differential resistance. The isothermal I-V characteristics of the Gunn diode were measured with a controlled systematic error due to the comparing the measurement result with the developed model of the I-V characteristic.

Highlights

  • Knowledge of the current-voltage (I-V) characteristic of the Gunn diode is necessary to select the operating point, determine the range of operating temperatures, and to diagnose the quality of the diodes.The isothermal current-voltage (I-V) characteristic of the Gunn diode has a discontinuity, hysteresis, and a region with negative differential resistance [1]

  • The I-V characteristic in the region before the threshold voltage is very sensitive to self-heating of the active area

  • At a decrease in current, the self-induction electromotive force (EMF) turns out to be positive, which leads to an increase in the voltage on the diode and to skipping the discontinuity and negative differential resistance region in the I-V characteristic

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Summary

Introduction

Knowledge of the current-voltage (I-V) characteristic of the Gunn diode is necessary to select the operating point, determine the range of operating temperatures, and to diagnose the quality of the diodes.The I-V characteristic of the Gunn diode has a discontinuity, hysteresis, and a region with negative differential resistance [1]. Effect of the inductance of the test pulses source on the measurement results of the I-V characteristics of Gunn diodes

Results
Conclusion
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