Abstract

The properties of graphene enriched silk depend on the amount of graphene oxide (GO) adsorption on silk. GO dipping parameters include the GO solution pH, initial GO concentration, dipping time and temperature, and the type of substrate. The effects of GO dipping parameters on the sorption process are studied to achieve the maximum GO adsorption on the silk surface for the preparation of an economical graphene/silk-based textile product. In addition, equilibrium isotherms, kinetics, and thermodynamics of GO adsorption on the silk surface in a batch sorption process are examined to understand the adsorption mechanism. The Freundlich isotherm best describes the adsorption of GO onto the silk. A pseudo-second order kinetic model best describes the kinetics of GO adsorption. Thermodynamic studies reveal that GO adsorption is spontaneous and exothermic.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call