Abstract
A general formula for the capacitance transient response in an MIS structure has been developed, including the continuous density distribution of interface states and discrete multi-impurity levels. A new method of spectroscopic measurement is proposed for determining the density distributions and capture cross-sections of interface states and bulk impurity levels under isothermal conditions. The method is then applied to an n-InAs/anodic oxide MIS diode.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
