Abstract
Transmission electron microscopy results are presented for as-deposited amorphous Ge2Sb2Te5 thin films after theirs isothermal annealing and CW laser illumination. Obtained microphotographs suggested that the crystallization process was driven solely by heterogeneous nucleation on the film boundary. The simplified model of steady-state crystallization process was developed for the case of heterogeneous nucleation mechanism. The values of nucleation rate and growth rate for isothermal and CW laser crystallization are calculated. The calculated values are in reasonable agreement with both our experimental data and with results previously published by the other authors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
