Isolating the Oxygen Adsorption Defects on Sputtered Tin Oxide for Efficient Perovskite Solar Cells

Abstract

Tin oxide (SnO2) is the most commonly used electron transport material for perovskite solar cells (PSCs). Various techniques have been applied to deposit tin dioxide, including spin-coating, chemical bath deposition, and magnetron sputtering. Among them, magnetron sputtering is one of the most mature industrial deposition techniques. However, PSCs based on magnetron-sputtered tin oxide (sp-SnO2) have a lower open-circuit voltage (Voc) and power conversion efficiency (PCE) than those prepared by the mainstream solution method. This is mainly due to the oxygen-related defects at the sp-SnO2/perovskite interface, and traditional passivation strategies usually have little effect on them. Herein, we successfully isolate the oxygen adsorption (Oads) defects located on the surface of sp-SnO2 from the perovskite layer using a PCBM double-electron transport layer. This isolation strategy effectively suppresses the Shockley-Read-Hall recombination at the sp-SnO2/perovskite interface, which results in an increase in the Voc from 0.93 to 1.15 V and an increase in PCE from 16.66 to 21.65%. To our knowledge, this is the highest PCE achieved using a magnetron-sputtered charge transport layer to date. The unencapsulated devices maintain 92% of their initial PCE after storage in air with a relative humidity of 30-50% after 750 h. We further use the solar cell capacitance simulator (1D-SCAPS) to confirm the effectiveness of the isolation strategy. This work highlights the application prospect of magnetron sputtering in the field of perovskite solar cells and provides a simple yet effective way to tackle the interfacial defect issue.