Isolated silicon waveguides via porous silicon formation by targeted fluorine doping

Abstract

AbstractIn this work, a combination of fluorine and boron ion implantation is used to create regions of higher and lower effective hole concentrations. Porous silicon formation is selective to the areas of higher hole concentration and this selectivity leads to isolated silicon regions surrounded by porous silicon. The effect of varying the annealing conditions on the final depth of the isolated crystalline silicon is also explored. The resulting porous silicon is oxidized to create an isolated region of crystalline silicon capable of functioning as an optical waveguide near 1550 nm.magnified image The cross section of a typical waveguide created with this process and an overlay of the TE fundamental E‐field mode profile for 1550 nm wavelength light source.