Abstract
We report electron transport measurements on a single-island single-electron transistor capacitively coupled to an isolated double quantum dot at 4.2 K. The structure is fabricated through trench isolation in silicon-on-insulator. We detect single-electron polarization of the isolated double quantum dot using the single-electron transistor as a sensitive electrometer, and estimate its charging energy. We observe a large suppression of current and modulation of Coulomb blockade peak heights as a function of applied gate voltages.
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