Abstract
A continuous CO2 laser was used for the first time to anneal the damage in GaAs0.6P0.4 induced during nitrogen implantation and to create nitrogen isoelectronic traps. Laser-annealed samples showed isoelectronic signals which are by a factor of 6–7 stronger as compared with thermally annealed samples. The intensity of the nitrogen-induced emission from the laser-annealed samples was up to 50% higher than that of the near-band-gap emission from the starting material.
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