Abstract
The isoelectronic doping of AlxGa1−xN alloys with arsenic in films grown by molecular-beam epitaxy has been investigated. In photoluminescence spectra of AlxGa1−xN layers, with an increase in Al mole faction, there is a progressive shift of the position of the blue band emission towards higher energies. The observed energy shift for blue band emission is less than the corresponding increase in the band gap of AlxGa1−xN. A model is presented, which can explain the observed shift in the energy of the blue band emission. This model also allows the AlxGa1−xN/GaN valence band offset to be estimated.
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