Isoelectronic CdTe-doped ZnO thin films grown by PLD

Abstract

Isoelectronic CdTe-doped ZnO thin films were grown by the pulse laser deposition (PLD) technique using targets of ZnO mixed with CdTe. X-ray diffraction shows a single-phase hexagonal of ZnO wurtzite structure. X-ray photoelectron spectroscopy shows the formation of Zn–Te bonds, which demonstrates the occupation of O vacancies by Te atoms in the ZnO lattice, although Cd–Te and Te–O bonds were also present. Elemental analysis of the films gave Cd concentration lower than 2% in the ZnO film, likely due to low Cd solid solubility in ZnO. Crystallite size, film thickness, chemical concentrations and morphologic characteristics are also reported.