Abstract
Isochronal annealing with zero and reverse bias applied to Schottky diodes was used to monitor the evolution of hydrogen interaction with point defects observed in hydrogen-implanted p-type silicon, i.e., divacancy (VV), carbon–oxygen interstitial pair (C i O i ) and two levels at E v+0.28 and E v+0.50 eV. The VV and C i O i are passivated by hydrogen liberated from hydrogen-containing defects during annealing in the temperature range 90–150°C and reappear upon annealing above 180°C under reverse bias due to hydrogen liberation and its field drift. Two levels at E v+0.50 and E v+0.28 eV are ascribed to irradiation-induced and hydrogen-related defects, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
