Isochronal annealing studies of carbon-related defects in irradiated Si

Abstract

We report infrared spectroscopy studies of defects in neutron-irradiated, carbon-doped, Cz-grown silicon. At room temperature irradiations, among the main defects formed are the C i C s and C i O i complexes. A peak in the spectra at 544 cm −1 was found to be the contribution of two bands at 543.5 and 545.5 cm −1. From the corresponding annealing behavior of these bands, the 543.5 cm −1 band was correlated with the C i C s defect although the 544.5 cm −1 band with the C i O i defect. At high-irradiation doses, complexes as the C i ( Si I ) ( 953 , 960 cm - 1 ) , C i O i ( Si I ) ( 934 , 1018 cm - 1 ) , C i C s ( Si I ) ( 987 , 993 cm - 1 ) and C s C s ( 527 cm - 1 ) form. Isochronal anneals performed in order to study the thermal evolution of these centers, showed that the C i ( Si I ) and C i O i ( Si I ) begin to decay in the spectra around 150 °C. Their disappearance is not accompanied by the emergence of any signal. The C i C s and the C i C s ( Si I ) centers begin to decay around ∼ 250 ∘ C . Their disappearance is accompanied by the emergence of two pairs of bands at ( 918 , 1006 cm - 1 ) and ( 945 , 964 cm - 1 ) , respectively. The origin of the centers, giving rise to these bands is discussed.