Abstract
The submonolayer growth by molecular beam epitaxy of InAs on the GaAs(001)-$(2\ifmmode\times\else\texttimes\fi{}4)$ surface has been studied using rapid-quench scanning tunneling microscopy. InAs islands exhibiting the $(2\ifmmode\times\else\texttimes\fi{}4)$ reconstruction are formed and show remarkably similar characteristics to GaAs submonolayer homoepitaxy on this surface. Detailed analysis of the islands indicates that strain plays a negligible role in their nucleation, and the $(2\ifmmode\times\else\texttimes\fi{}4)$ reconstruction dominates both island growth and island anisotropy.
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