Abstract
Scaling properties associated with island size and separation distributions are presented for three different coverages of InAs on GaAs(001). The island size distribution is similar to that observed for homoepitaxy and obeys scaling behavior when considering the average island area. Since the island growth is anisotropic, the island size distribution was separated into [110] and [ $\overline{1}10$] components, and scaling is only observed in the [ $\overline{1}10$] direction. An analysis of the radial distribution of the islands shows clustering.
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