Island formation in Sb films deposited at room temperature on Si(100)2 x 1 surfaces.

Abstract

The early stages of Sb films deposited at room temperature on Si(100)2\ifmmode\times\else\texttimes\fi{}1 surfaces have been investigated by angle-integrated and angle-resolved Auger spectroscopy. A comparison between the experimental results and the predictions of simple deposition models indicates that the growth of the Sb film proceeds by island formation. Without any annealing, a uniform overlayer never develops up to films 4 nm thick.