Abstract
ABSTRACTMicrostructure evolution has been studied in the early stages of growth of polycrystalline Ge on SiO2 in ultrahigh vacuum by ion beam-assisted deposition, and has been systematically compared to conventional thermal film growth. Experimental results indicate that, at equivalent substrate coverages, films grown by ion beam-assisted deposition exhibit increased island density and decreased island size with respect to thermally-deposited films. The increased island density is not a result of an increased island nucleation rate associated with defects produced in the SiO2 substrate during ion beam-assisted deposition. Instead, a new model for ion beam-induced adatom desorption from islands is proposed to account for the increased island density and decreased island size.
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