Abstract
Two types of pH-ISFETs were used as the basis for F −-FETs with Si 3N 4 or Al 2O 3 as sensitive layers, respectively. Deposition of LaF 3 on the gate isolator results in pF-ISFETs. A Nernstian sensitivity was reached with both kinds of fluoride ISFETs. While the ISFETs with the Si 3N 4 interlayer were very stable, a drift of 5–10 mV/h was observed for those using Al 2O 3 in contact with the LaF 3 layer. We suppose that insertion of fluoride into the Al 2O 3 is the reason for that effect. A combination of pH- and pF-ISFETs was investigated in acid solutions. It was found that the limit of detection can be improved by one order of magnitude in acid solutions. Impedance spectroscopy and tracer measurements with 18F were used to identify the rate determining step of the potential forming process.
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