Abstract
AbstractThe electrical impact of threading dislocations in strained‐germanium (s‐Ge) grown on a strain‐relaxed Si0.2Ge0.8 buffer is investigated by means of the current‐voltage (I‐V) and capacitance‐voltage (C‐V) characteristics of p+n and n+p junctions fabricated in these layers. For comparison, reference devices with a two to three orders of magnitude lower threading dislocation density (TDD) have also been studied. While the leakage current of the s‐Ge diodes is about two decades higher, indicating an overall correlation with TDD, the impact of a post‐growth anneal cannot be explained by a removal of TDs. Instead, it is believed that the heat‐treatment‐induced improvement of the reverse current is associated with the removal of point defect clusters from the SiGe buffer layers. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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