Abstract

As a workable substitute for toxic PbTe-based thermoelectrics, GeTe-based materials are emanating as reliable alternatives. To assess the suitability of LiI as a dopant in thermoelectric GeTe, a prelusive study of thermoelectric properties of GeTe1−xLiIx (x = 0–0.02) alloys processed by Spark Plasma Sintering (SPS) are presented in this short communication. A maximum thermoelectric figure of merit, zT ~ 1.2, was attained at 773 K for 2 mol% LiI-doped GeTe composition, thanks to the combined benefits of a noted reduction in the thermal conductivity and a marginally improved power factor. The scattering of heat carrying phonons due to the presumable formation of Li-induced “pseudo-vacancies” and nano-precipitates contributed to the conspicuous suppression of lattice thermal conductivity, and consequently boosted the zT of the Sb-free (GeTe)0.98(LiI)0.02 sample when compared to that of pristine GeTe and Sb-rich (GeTe)x(LiSbTe2)2 compounds that were reported earlier.

Highlights

  • IntroductionThe efficiency of a TE material is quantified by a dimensionless figure of merit, zT = S2 σT/κ, where σ, S, T and κ are the electrical conductivity, Seebeck coefficient, absolute temperature and total thermal conductivity (which constitute both the electronic part, κe , and the lattice part, κlatt ), respectively

  • Thermoelectric (TE) materials and devices have gained limelight due to their ability to reversibly convert waste heat into useful electricity, especially for energy harvesting applications [1,2,3].The efficiency of a TE material is quantified by a dimensionless figure of merit, zT = S2 σT/κ, where σ, S, T and κ are the electrical conductivity, Seebeck coefficient, absolute temperature and total thermal conductivity, respectively.These transport properties are highly interlinked and there is a greater challenge in decoupling the electrical and thermal transport parameters [4]

  • The sharp reflections noticed from the X-ray diffraction (XRD) patterns for (GeTe)1-x (LiI)x (x = 0–0.02) stipulate the phases to be crystalline in nature (Figure 1)

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Summary

Introduction

The efficiency of a TE material is quantified by a dimensionless figure of merit, zT = S2 σT/κ, where σ, S, T and κ are the electrical conductivity, Seebeck coefficient, absolute temperature and total thermal conductivity (which constitute both the electronic part, κe , and the lattice part, κlatt ), respectively These transport properties are highly interlinked and there is a greater challenge in decoupling the electrical and thermal transport parameters [4]. GeTe-based materials have emerged as viable alternatives, as they have proven to exhibit higher TE performance (zT > 1), if optimally alloyed/doped with appropriate elements [19] Such strategies have been effectively adopted on several classes of GeTe-based materials to improve their electrical transport properties (i.e., the power factor, S2 σ) by the convergence of electronic band valleys [20,21] or by the introduction of resonance states [22,23], and/or to suppress their thermal transport properties by nanostructuring [24].

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