Abstract
Si3N4 film could be selectively removed by a special H3PO4-free etchant. In order to increase Si3N4 etching rate and Si3N4/SiO2 etch selectivity, various additives were added to H3PO4-free etchant. The optimization of additives into H3PO4-free solution, a comparable Si3N4 etching rate with 50 times increased Si3N4/SiO2 etch selectivity was obtained as compared to the conventional H3PO4 process.
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